Influence of the doping level on the microstructure of P-type porous silicon studied by small-angle X-ray scattering
- 1 October 1991
- journal article
- Published by International Union of Crystallography (IUCr) in Journal of Applied Crystallography
- Vol. 24 (5) , 581-587
- https://doi.org/10.1107/s0021889891001085