Defect-assisted relaxation in quantum dots at low temperature
- 15 July 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (3) , 1486-1489
- https://doi.org/10.1103/physrevb.54.1486
Abstract
A model for electron relaxation in a quantum dot, including a nonradiative pathway through a point defect, is presented, using time-dependent perturbation theory. The results obtained here extend previous work [Phys. Rev. B 51, 14 532 (1995)] to the experimentally relevant low-temperature regime. It is found that relaxation through defects may circumvent the phonon bottleneck predicted for ideal nanometer-scale quantum dot structures even at low temperatures. © 1996 The American Physical Society.Keywords
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