Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking
- 1 October 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (10) , 1325-1327
- https://doi.org/10.1109/68.623251
Abstract
Operating conditions for modulation bandwidth enhancement, noise reduction, and stable locking to be simultaneously fulfilled in a semiconductor laser subject to strong optical injection are investigated. When the strength of the injection signal is fixed, the optimum detuning of the injection frequency exists as a tradeoff between bandwidth enhancement and noise reduction. When the laser is injection-locked at a given value of frequency detuning in the stable locking region, both bandwidth enhancement and noise reduction are improved as the injection parameter is increased over a wide range.Keywords
This publication has 7 references indexed in Scilit:
- Enhanced modulation bandwidth in injection-locked semiconductor lasersIEEE Photonics Technology Letters, 1997
- Small-signal analysis of modulation characteristics in a semiconductor laser subject to strong optical injectionIEEE Journal of Quantum Electronics, 1996
- Bandwidth enhancement and broadband noise reduction in injection-locked semiconductor lasersIEEE Photonics Technology Letters, 1995
- Period-doubling cascades and chaos in a semiconductor laser with optical injectionPhysical Review A, 1995
- Four-wave mixing and optical modulation in a semiconductor laserIEEE Journal of Quantum Electronics, 1994
- Injection locking in distributed feedback semiconductor lasersIEEE Journal of Quantum Electronics, 1991
- Locking conditions and stability properties for a semiconductor laser with external light injectionIEEE Journal of Quantum Electronics, 1985