High-performance InGaAsP/InP 1.3 μm laser structures with both facets etched

23 October 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (22) , 1157-1158
https://doi.org/10.1049/el:19860792

Abstract

InGaAsP/InP laser structures with both facets etched are successfully fabricated by angled reactive ion etching (RIE) utilising a TiO₂ mask and Cl₂-Ar gas. Typical CW threshold current ranges from 20 to 30 mA at 25°C, and light output power from one facet exceeds 25 mW. Results of the aging test at 50°C and 100 mA show no serious degradation for 3200 h.

Keywords

20 TO 30 MA
ETCHED FACETS
25 DEGC
1.3 MICRON
CW THRESHOLD CURRENT
CL2-AR
HIGH-PERFORMANCE-LASER STRUCTURES
50 DEGC
LIGHT OUTPUT POWER
INGAASP-INP LASER STRUCTURES
TIO2 MASK
AGING TEST
25 MW
100 MA
REACTIVE ION ETCHING

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