Temperature rise of pin diodes from X band pulses
- 1 May 1965
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 1 (3) , 65
- https://doi.org/10.1049/el:19650063
Abstract
When pin microwave silicon switching diodes are subjected to high-power Xband pulses, the absorbed energy is not distributed uniformly. An apparent peak temperature delay is evidenced when using the junction forward-voltage characteristics as an indicator, and is explained by assuming a model with heat generation in the centre of the i region and the n–i and p–i junctions as sensors.Keywords
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