Effects of uniaxial stress and temperature variation on thecenter in GaAs
- 15 July 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 20 (2) , 795-800
- https://doi.org/10.1103/physrevb.20.795
Abstract
The effects both of applied uniaxial stress and of temperature variation on the EPR spectrum of in GaAs have been studied. The rapid stress-induced alignment of the centers at 4.2 K shows that the observed tetragonal symmetry is due to the Jahn-Teller effect as was previously suggested. The Jahn-Teller coefficient for an -symmetry distortion mode is 0.85±0.09 eV/Å and the Jahn-Teller splitting of the ground manifold is estimated. Stress has only a small effect on the spin-Hamiltonian parameters in agreement with the large found. When taken together with previous optical work the results imply a significant Jahn-Teller splitting in the state also. The EPR lines broaden in the 9—20-K temperature range and the temperature-dependent linewidth parameter is deduced from both the observed signal amplitudes and linewidths of the inhomogeneously broadened lines. The relation is obeyed with . Comparison with recent ultrasonic attenuation studies in GaAs: Cr shows that , the reorientation rate. The dependence of on temperature is probably due to motional broadening.
Keywords
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