Mössbauer study of the microscopic surrounding of co atoms implanted in si and ge below the full amorphization limit
- 1 January 1982
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 67 (4) , 101-106
- https://doi.org/10.1080/01422448208226865
Abstract
Mössbauer spectroscopy on 57Co implanted into Si and Ge at doses between 1011 and 1015 atoms/cm2 supports the single track amorphization model. Calculations based on linear cascade theory do not give quantitative agreement with the experiment.Keywords
This publication has 14 references indexed in Scilit:
- Phase changes in insulators produced by particle bombardmentNuclear Instruments and Methods, 1981
- Short‐Range Order Modelling and Bonding in Metal–a‐Ge SystemsPhysica Status Solidi (b), 1980
- Disorder production and amorphisation in ion implanted siliconRadiation Effects, 1980
- Observation of a Strong Dose Dependence in 57Co Implantations in Si and GePhysica Status Solidi (b), 1979
- On the Existence of a Quadrupole Interaction at57Fe Implanted in Si and GePhysica Status Solidi (b), 1978
- Energy spike generation and quenching processesin ion bombardment induced amorphizationof solidsRadiation Effects, 1978
- Computer simulation of ion bombardment collision cascadesRadiation Effects, 1978
- Comparability of57Fe mössbauer data in ion-implanted and amorphous FeGePhysica Status Solidi (b), 1977
- Criteria for bombardment-induced structural changes in non-metallic solidsRadiation Effects, 1975
- Effect of irradiation temperature on Si amorphization processRadiation Effects, 1975