Temperature Non-Uniformities During Rapid Thermal Processing Of Patterned Wafers

6 April 1990

conference paper
Published by SPIE-Intl Soc Optical Eng

Vol. 1189, 89-105
https://doi.org/10.1117/12.963962

Abstract

During rapid thermal processing, temperature non-uniformities are created due to patterned layers on the wafers. A theoretical calculation of this non-uniformity is presented. Results are in good agreement with previously reported experimental results. The influence of the RTP-system design, concerning lamp-system, window-type and chamber reflectivity is studied. Also, the influence of pattern size and steady-state temperature is discussed. For the technological important case of Si02 patterns on Si, specific examples are calculated. As a conclusion it is shown that when the patterns are on the front-side, heating of the wafer should be restricted to the back-side of the wafer, while the front-side of the wafer should face a highly-reflecting chamber.© (1990) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

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