Mechanism of oxygen plasma etching of polydimethyl siloxane films
- 1 January 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1) , 31-33
- https://doi.org/10.1063/1.95839
Abstract
We have used x-ray photoelectron spectroscopy and multiple internal reflection infrared spectroscopy to study the etching of polysiloxane films in an rf oxygen plasma. The results indicate that a structurally strained SiO2 layer, ∼1 nm thick, is formed on the film exposed to oxygen plasma. For a given rf power input this oxidized overlayer recedes with the etching front in a steady state fashion, acting as a protective layer for the underlying polysiloxane film. The etching mechanism is effectively a combination of two competitive processes, namely, ion sputtering and oxidation.Keywords
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