Sequential anneal effect on bipolar transistor with phosphorus-implanted emitter
- 1 September 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (9) , 1103-1104
- https://doi.org/10.1109/T-ED.1976.18545
Abstract
An n-p-n-type bipolar transistor with an emitter region formed by a new ion implantation predeposition diffusion exhibits much less leakage current compared to that formed by a conventional process. This new emitter region has a thermal history of first anneal at 500°C, second anneal at 900°C, and third anneal at 1050°C after phosphorus implantation predeposition of 1 × 1016/cm2at 50 keV.Keywords
This publication has 0 references indexed in Scilit: