Mean projected range and range straggling of 50- to 400-keV Hg+ in glass
- 1 October 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (7) , 3341-3344
- https://doi.org/10.1063/1.341515
Abstract
The range profile of Hg+ implanted at energies from 50 to 400 keV in glass was measured by 4He+ Rutherford backscattering. The measured projected ranges are in good agreement with those predicted by the Biersack model. A marked improvement in the range straggling fit is obtained after considering the second‐order energy loss.This publication has 12 references indexed in Scilit:
- Range profiles of implanted Bi and Au in amorphous siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Range and spatial distribution of ion-implanted impurities in glassesRadiation Effects, 1983
- A universal equation for the electronic stopping of ions in solidsPhysics Letters A, 1982
- New projected range algorithm as derived from transport equationsThe European Physical Journal A, 1982
- Ion implantation effects in glassesRadiation Effects, 1982
- Calculation of projected ranges — analytical solutions and a simple general algorithmNuclear Instruments and Methods, 1981
- Heavy ion ranges in aluminium and siliconRadiation Effects, 1978
- Calculations of nuclear stopping, ranges, and straggling in the low-energy regionPhysical Review B, 1977
- Calculation of energy straggling for protons and helium ionsPhysical Review A, 1976
- Analysis of arsenic range distributions in siliconApplied Physics A, 1975