Determination of the trapped charge distribution in scaled silicon nitride MONOS nonvolatile memory devices by tunneling spectroscopy
- 1 October 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (10) , 1083-1089
- https://doi.org/10.1016/0038-1101(91)90104-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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