A new solution for minority-carrier injection into the emitter of a bipolar transistor
- 1 July 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (7) , 1231-1238
- https://doi.org/10.1109/T-ED.1980.20013
Abstract
A new analytic solution for minority-carrier injection into the emitter of a bipolar transistor has been derived. Effects such as Shockley-Read-Hall (SRH) recombination, Auger recombination, bandgap narrowing, graded impurity profile, and position-dependent mobility have been included. A quantitative definition of "transparency" in an emitter is presented. Numerical results show the appearance of a minimum in injected minority-carrier current with respect to the impurity concentration at the surface. This minimum is due to the interaction of Auger recombination and the built-in electric field as impurity concentration is increased. The relative ease and speed necessary to obtain numerical results makes this method very useful for the design and optimization of transistors.Keywords
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