Transient forward bias currents in a-Si:H p-i-n devices
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 339-342
- https://doi.org/10.1016/0022-3093(93)90559-g
Abstract
No abstract availableKeywords
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- Study of the electronic structure of amorphous silicon using reverse-recovery techniquesApplied Physics Letters, 1982