Kinetics of electron-stimulated oxidation of GaAs(1̄1̄1̄)

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Abstract
Kinetics and current dependence of the electron-stimulated oxidation (ESO) of GaAs (1̄1̄1̄) surfaces are obtained by means of a quantitative Auger numerical formalism for oxide layers applied to new experimental data. The kinetics presents two stages: a linear growth with time, and a saturation region. The rate of growth and the saturation thickness for the oxide layer show simultaneous maxima as a function of the current density. The amount of oxygen adsorbed in the preoxidation stage (two monolayers of atomic height) and its independence of the current density is also obtained. The minimum diameter of the oxide spots made with our conventional Auger gun is about 20 μm. The possibility of a classical interpretation of ESO effects in GaAs (1̄1̄1̄) looks controversial.

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