Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layer
- 21 May 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (11) , 566-568
- https://doi.org/10.1049/el:19870406
Abstract
The effects of the emitter resistance reduction on the DC and high-frequency characteristics in an AIGaAs/GaAs HBT with an InGaAs emitter cap layer are investigated. In fabricated devices, a transconductance per unit area of 16mS/μm2 and a cutoff frequency of 80 GHz have been achieved.Keywords
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