Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layer

Abstract
The effects of the emitter resistance reduction on the DC and high-frequency characteristics in an AIGaAs/GaAs HBT with an InGaAs emitter cap layer are investigated. In fabricated devices, a transconductance per unit area of 16mS/μm2 and a cutoff frequency of 80 GHz have been achieved.

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