New phenomena in homoepitaxial growth of metals
- 1 November 1991
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 53 (5) , 369-376
- https://doi.org/10.1007/bf00348149
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substratesPhysical Review Letters, 1990
- Low-temperature epitaxial growth of thin metal filmsPhysical Review B, 1990
- Random-deposition models for thin-film epitaxial growthPhysical Review B, 1989
- Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 KPhysical Review Letters, 1989
- Scattering of Thermal Energy AtomsPublished by Springer Nature ,1989
- Monte Carlo simulation of the growth of a Cu(100) surface from its own vapor; island nucleation and step propagation growth modesJournal of Crystal Growth, 1988
- The surface morphology of a growing crystal studied by thermal energy atom scattering (TEAS)Surface Science, 1987
- Epitaxy of metals on metalsApplications of Surface Science, 1982
- Phänomenologische Theorie der Kristallabscheidung an Oberflächen. IZeitschrift für Kristallographie, 1958
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951