Chemical etching of thin film PLZT
- 1 October 1992
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 135 (1) , 131-137
- https://doi.org/10.1080/00150199208230018
Abstract
A technique to chemically etch thin film PLZT has been developed. Micrometer geometries with straight walls have been produced in 0.7 μm thick films. The photolithography procedure was typical of semiconductor type processes. The etching procedure was to agitate the wafers in a solution of one part BOE, two parts HCl, and three parts water, then to dip them in HNO3 diluted 50 %. The etch rate was approximately 0.01 μm/sec. Partial etching is not possible, because the stoichiometry is not maintained during the etch and the surface figure is distorted.Keywords
This publication has 4 references indexed in Scilit:
- Reactive ion beam etching of PLZT electrooptic substrates with repeated self-aligned maskingApplied Optics, 1986
- PLZT thin-film waveguidesApplied Optics, 1984
- Epitaxial growth of ferroelectric PLZT [(Pb, La)(Zr, Ti)O3] thin filmsJournal of Crystal Growth, 1978
- Electro-optic effects of PLZT thin filmsApplied Physics Letters, 1977