PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED a-Si:H

1 October 1981

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 42 (C4) , C4-375
https://doi.org/10.1051/jphyscol:1981480

Abstract

We show that the increase in the density of gap states N(E) resulting from the photocreation of defects in plasma-deposited a-Si:H can be measured by the field effect and by the conductance change due to surface adsorbates. A simple model is presented which explains the doping dependence of the magnitude and the sign of the light-induced conductance changes

Keywords

PHOTO CREATION
PLASMA DEPOSITED
CREATION OF DEFECTS
DEFECTS IN PLASMA
DEPOSITED A SI

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