Electron beam modification of the Schottky diode characteristics of diamond
- 27 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (4) , 429-431
- https://doi.org/10.1063/1.107904
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- High-temperature epitaxy of diamond in a turbulent flameDiamond and Related Materials, 1992
- A thin-film Schottky diode fabricated from flame-grown diamondJournal of Applied Physics, 1991
- High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamondIEEE Electron Device Letters, 1987
- Electron spectroscopy of the diamond surfaceApplied Physics Letters, 1981