Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 502-508
- https://doi.org/10.1016/0022-0248(91)90511-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- InGaAs/InAsPSb diode lasers with output wavelengths at 2.52 μmApplied Physics Letters, 1990
- Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μmElectronics Letters, 1989
- New III-V double-heterojunction laser emitting near 3.2μmElectronics Letters, 1988
- 140 Mbit/s receiver performance at 2.4μm using InAsSbP detectorElectronics Letters, 1988
- 2.6 μm InGaAs photodiodesApplied Physics Letters, 1988
- Characteristic temperature T o of Ga 0.83 In 0.17 As 0.15 Sb 0.85 /AI 0.27 Ga 0.73 As 0.02 Sb 0.98 injection lasersElectronics Letters, 1988
- Growth of GaInAsSb Alloys by MOCVD and Characterization of GaInAsSb / GaSb p‐n PhotodiodesJournal of the Electrochemical Society, 1988
- Liquid-phase-epitaxial InAsySb1−y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid-IR photodiodesJournal of Applied Physics, 1987