Effects of deep level defects in semiconductor detectors
- 1 August 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 377 (2-3) , 234-243
- https://doi.org/10.1016/0168-9002(96)00025-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Modeling and simulation of neutron induced changes and temperature annealing of Neff and changes in resistivity in high resistivity silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Divacancy acceptor levels in ion-irradiated siliconPhysical Review B, 1991
- Defect production and lifetime control in electron and γ-irradiated siliconJournal of Applied Physics, 1982