Preliminary results on the performance of a W/Au gate GaAs f.e.t. having T-type gate cross-section are reported. The Au overhang on the W gate can be used to self-align the source and the drain with respect to the gate, which can be used to achieve submicrometre gate dimensions rather easily. An f.e.t. with 0.7 μm gate length and 140 μm gate periphery exhibited a measured maximum available gain (m.a.g.) of 14 dB at 8 GHz, Experiments on the W Schottky diodes indicate that the leakage current, instead of degrading, is actually reduced by annealing at high temperature in a H2 atmosphere for 10 min.