Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates

• 1 January 1996
• journal article
• Published by The Electrochemical Society in Journal of the Electrochemical Society
• Vol. 143  (1) , L17-L19
• https://doi.org/10.1149/1.1836377

Abstract

Keywords

• SCANNING ELECTRON MICROSCOPY
• POTASSIUM
• ENERGY GAP
• MATERIALS SCIENCE
• DISLOCATIONS
• CRYSTAL STRUCTURE