Secondary Defects of As+ Implanted Silicon Measured by Thermal Wave Technique
- 1 July 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (7A) , L1089
- https://doi.org/10.1143/jjap.26.l1089
Abstract
As+ implanted layers have considerable residual defects even after annealing treatment. The evaluation of the defects of impurity layers has been very important for such micro-devices as VLSI, and TEM analysis has been extensively investigated. In this paper, As+ implanted silicon after annealing was measured by the thermal wave technique. Samples of doses higher than 1×1015 cm-2 have more highly increased secondary damage. The defects can be annealed out considerably at 800°C, and higher temperature annealing is very effective to decrease this secondary damage.Keywords
This publication has 2 references indexed in Scilit:
- Ion implant monitoring with thermal wave technologyApplied Physics Letters, 1985
- Use Of Thermal Waves To Measure Dose And Uniformity Of Si + And Be + Implants Into GaAsPublished by SPIE-Intl Soc Optical Eng ,1985