Raman scattering investigations of the damage caused by reactive-ion-etching of GaAs
- 31 December 1988
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 4 (2) , 243-244
- https://doi.org/10.1016/0749-6036(88)90043-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretationApplied Physics Letters, 1984
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Raman scattering from the surface phonon mode in GaP microcrystalsPhysical Review B, 1982