LOCAL VIBRATIONAL MODES AND THE OPTICAL ABSORPTION TAIL OF AMORPHOUS SILICON

Publisher Website
Google Scholar
Abstract
Local vibrational modes of Si - H is an important research area in recent years. Local vibrational modes of chemical bonds between Si atom and other impurity atoms such as H and O in amorphous silicon films produced by radio frequency sputtering were studied by means of Fourier transform infrared spectroscopy. The concentrations of Si - H , Si - O and Si - C in the sample were calculated. It was found that the concentration of Si - H bond varied significantly when the material was annealed at temperatures Ta >600 K and tended to zero for Ta >1000 K . The optical absorption edge was also found to depend strongly on the thermal history of the amorphous semiconductor. A strong correlation between the optical absorption coefficient and the concentration of Si - H was also observed.