High-intensity terahertz pulses at 1-kHz repetition rate
- 1 October 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 32 (10) , 1839-1846
- https://doi.org/10.1109/3.538792
Abstract
We report the generation of terahertz pulses with 0.4-/spl mu/J pulse energy at 1-kHz repetition rate using a large-aperture GaAs photoconductor with 3-cm gap aluminum electrodes, biased at voltages up to 45 kV. The terahertz output energy saturates at a laser fluence of 40 /spl mu/J/cm/sup 2/ at low-bias fields, while no clear saturation point was observed at high-bias fields. The output was found to be dependent on the repetition rate: at high fluences, pulse energy at 1 kHz is higher than that at 100 Hz by as much as 60%. A study of the behavior of the terahertz pulse energy and pulsewidth as a function of the pulsewidth of the laser excitation was conducted and compared with theoretical predictions. Propagation properties of the terahertz beam were also characterized, leading to a focal spot size as small as 800 /spl mu/m at the focus of a 2.5-in focal length parabolic mirror.Keywords
This publication has 18 references indexed in Scilit:
- Terahertz electromagnetic pulses as probes for transient velocity overshoot in GaAs and SiJournal of the Optical Society of America B, 1994
- Bolometers for infrared and millimeter wavesJournal of Applied Physics, 1994
- Nonlinear transport in semi-insulating GaAs: Critical fields and nucleation of high-field domainsPhysical Review B, 1994
- Terahertz electromagnetic transients as probes of a two-dimensional electron gasApplied Physics Letters, 1993
- Generation of high-power sub-single-cycle 500-fs electromagnetic pulsesOptics Letters, 1993
- Saturation properties of large-aperture photoconducting antennasIEEE Journal of Quantum Electronics, 1992
- Intervalley scattering in GaAs and InP probed by pulsed far-infrared transmission spectroscopyApplied Physics Letters, 1992
- Far-infrared light generation at semiconductor surfaces and its spectroscopic applicationsIEEE Journal of Quantum Electronics, 1992
- Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injectionApplied Physics Letters, 1991
- Terahertz time-domain spectroscopy of water vaporOptics Letters, 1989