Vertical m.o.s. transistor geometry for power amplification at gigahertz frequencies

14 November 1974

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 10 (23) , 490-492
https://doi.org/10.1049/el:19740390

Abstract

A new vertical-channel silicon m.o.s.t.configuration has exhibited a high average current density (1000 A/cm²), a high periphery/output-area ratio (0.2 μm⁻¹), and a high-current capability (160 μA/μm), consistent with high power-frequency performance. Experimental state-of-the-art results include 1.2 W r.f.at 0.7 GHz and a device f^max of 2.1 GHz.

Keywords

VERTICAL GEOMETRY MOSFET
MICROWAVE POWER AMPLIFIERS