Single-Crystal Growth of LaF3
- 1 June 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (6) , 1945-1946
- https://doi.org/10.1063/1.1713775
Abstract
Single crystals of LaF3 have been grown by the Čzochalski technique. Crystal clarity and perfection were strongly dependent on the amount of oxide impurity. Trivalent rare‐earth doping was easily achieved, and divalent doping was possible with the easily reduced rare earths such as europium and samarium.This publication has 11 references indexed in Scilit:
- STIMULATED EMISSION AT 5985 Å FROM Pr+3 IN LaF3Applied Physics Letters, 1963
- Growth of Highly Perfect Fluoride Single Crystals for Optical MasersJournal of Applied Physics, 1963
- Optical Maser Characteristics of Rare-Earth Ions in CrystalsJournal of Applied Physics, 1963
- Shielding and Crystal Fields at Rare-Earth IonsPhysical Review B, 1962
- Melting Points of Inorganic FluoridesJournal of the American Ceramic Society, 1962
- Emission Spectra of the Doubly and Triply Ionized Rare Earths*Journal of the Optical Society of America, 1961
- Artificial FluoriteJournal of the Optical Society of America, 1949
- The production of large artificial fluorite crystalsDiscussions of the Faraday Society, 1949
- The Production of Large Single Crystals of Lithium FluorideReview of Scientific Instruments, 1936
- Certain Physical Properties of Single Crystals of Tungsten, Antimony, Bismuth, Tellurium, Cadmium, Zinc, and TinProceedings of the American Academy of Arts and Sciences, 1925