Effect of hydrogen treatment on electrically active centers in AlGaAsSb
- 15 June 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (24) , 3004-3006
- https://doi.org/10.1063/1.106790
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Schottky barriers of various metals on Al0.5Ga0.5As0.05Sb0.95 and the influence of hydrogen and sulfur treatments on their propertiesJournal of Applied Physics, 1992
- Hydrogen treatment effect on shallow and deep centers in GaSbApplied Physics Letters, 1992
- Deep levels in Te-doped AlSb grown by molecular beam epitaxyApplied Physics Letters, 1990
- Deep donor levels (D X centers) in III-V semiconductorsJournal of Applied Physics, 1990
- On the scaling of an ion-implanted silicon MESFETSolid-State Electronics, 1989
- Hydrogen in Crystalline SemiconductorsAnnual Review of Materials Science, 1988
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Hydrogen depth profiles and optical characterization of annealed, proton-implanted n-type GaAsJournal of Applied Physics, 1985
- Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μmElectronics Letters, 1985
- Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperatureSoviet Journal of Quantum Electronics, 1985