Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors

1 August 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (8) , 1650-1657
https://doi.org/10.1109/T-ED.1987.23133

Abstract

We present the results of theoretical and experimental studies of heterostructure insulated-gate field-effect transistors (HIG' FET's). We develop an improved charge-control model for the two-dimensional densities of electronand hole gases at the heterointerface. Our model provides an accurate description of the device behavior even at relatively low densities of two-dimensional gases. We obtain the current-voltage characteristics of HIGFET's using our charge-control model and account for the gate current. The theoretical calculations are in good agreement with the experimental measurements.

Keywords

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