Abrupt p + layers in GaAs by 200°C mercury implantation
- 23 November 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (24) , 1618-1620
- https://doi.org/10.1049/el:19891084
Abstract
We have demonstrated for the first time abrupt and shallow p-type layers in GaAs by implanting mercury and the use of rapid thermal annealing (RTA). We have observed that the time dependence of electrical activation characteristics of the Hg-implanted samples is similar to other p-type species. Furthermore, abrupt electrical profiles with hole concentrations of the order of 9×1018cm−3 have been achieved after annealing at 900°C for 3 s.Keywords
This publication has 1 reference indexed in Scilit:
- Implantation of Be, Cd, Mg and Zn in GaAs and GaAsl-xPxPublished by Springer Nature ,1977