Control of Etch Slope during Etching of Pt in Ar/Cl2/O2 Plasmas
- 1 April 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (4S) , 2501-2504
- https://doi.org/10.1143/jjap.35.2501
Abstract
Pt patterns of the 0.25 µ m design rule were etched at 20° C using a magnetically enhanced reactive ion etcher. The main problem of this device integration process is the redeposition of the etch products onto the pattern sidewall, making it difficult to reduce the pattern size. In both cases using a photoresist mask and an oxide mask, the redeposits of the etch products onto the sidewall were reduced by the addition of Cl2 to Ar, although the etch slope was lowered to 45°. Using the oxide mask, by adding O2 to the Cl-containing gas, the etch slope was increased up to 70°, and the redeposits were removed by an HCl cleaning process.Keywords
This publication has 2 references indexed in Scilit:
- Platinum Etching and Plasma Characteristics in RF Magnetron and Electron Cyclotron Resonance PlasmasJapanese Journal of Applied Physics, 1993
- Plasma Etching of RuO2 Thin FilmsJapanese Journal of Applied Physics, 1992