Water‐Related Charge Motion in Dielectrics

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Abstract
We studied the electrical behavior of various materials that are potentially useful as the interlevel dielectric for the MOS IC. Our interest was the water‐related instability in these materials. The main tool of our study was the triangular voltage sweep technique. We also developed a new technique, current decay integration, which gives a quantitative analysis of water‐related charge. We concluded that all tested dielectrics exhibit, to some degree, a water‐related charge. Some are afflicted even after a 450°C anneal, others degrade when exposed to atmospheric moisture. In this paper, we discuss the effect of absorbed water on the performance of the MOS IC and suggest criteria for the evaluation of dielectric materials.

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