Parallel Nature of theEnergy Bands in Germanium
- 2 August 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 27 (5) , 265-269
- https://doi.org/10.1103/physrevlett.27.265
Abstract
We report that the 2-eV electroreflectance structures in germanium can be represented by a two-dimensional critical line which contains the point and extends over approximately 80% of the distance from to .
Keywords
This publication has 14 references indexed in Scilit:
- Approximate Treatment of Exciton Effects in Electric Field Modulation Via the Slater-Koster InteractionPhysical Review Letters, 1970
- Interference of Light- and Heavy-Hole Contributions to the Electroreflectance Spectrum of GermaniumPhysical Review Letters, 1969
- Field Inhomogeneity in ElectroreflectancePhysical Review B, 1969
- Low Temperature Electro-Reflectance Spectra of Germanium in Spectral Region from 0.7 to 2.6 eVJournal of the Physics Society Japan, 1969
- Fourier Expansion for the Electronic Energy Bands in Silicon and GermaniumPhysical Review B, 1967
- Electroreflectance at a Semiconductor-Electrolyte InterfacePhysical Review B, 1967
- Optical Constants of Germanium in Spectral Region from 0.5 eV to 3.0 eVPhysical Review B, 1966
- Energy-Band Structure of Germanium and Silicon: The k·p MethodPhysical Review B, 1966
- Franz-Keldysh Effect above the Fundamental Edge in GermaniumPhysical Review Letters, 1965
- Critical Points and Ultraviolet Reflectivity of SemiconductorsPhysical Review Letters, 1962