Pressure dependence of the Raman phonon spectrum in 6h-silicon carbide
- 1 July 1991
- journal article
- Published by Elsevier in Journal of Molecular Structure
- Vol. 247, 373-384
- https://doi.org/10.1016/0022-2860(91)87088-y
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scatteringJournal of Applied Physics, 1987
- Relative Raman intensities of the folded modes in SiC polytypesPhysical Review B, 1986
- Pressure dependence of the optical phonons and transverse effective charge in-SiCPhysical Review B, 1982
- Pressure dependence of Raman phonons of Ge and-SiCPhysical Review B, 1982
- Pressure-Induced Phonon Frequency Shifts Measured by Raman ScatteringPhysical Review B, 1969
- Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes , , , , andPhysical Review B, 1968
- Raman Scattering inSiCPhysical Review B, 1968
- Elastic Properties of Silicon CarbideJournal of the American Ceramic Society, 1968
- Infrared Absorption in SiC PolytypesPhysical Review B, 1968
- The Compressibility of Media under Extreme PressuresProceedings of the National Academy of Sciences, 1944