Abstract
We describe a method to fabricate atomic-scale gaps and contacts between two metal electrodes. The method uses a directional electrodeposition process and has a built-in self-termination mechanism. The final gap width and contact size are preset by an external resistor (Rext) that is connected in series to one of the electrodes. If 1/Rext is chosen to be much smaller than the conductance quantum (G0=2e2/h), a small gap with conductance determined by electron tunneling is formed. If 1/Rext is comparable or greater than G0, a contact with conductance near a multiple of G0 is fabricated.