Photoconductive Hg1−xCdxTe detectors grown by low-temperature metalorganic chemical vapor deposition
- 24 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (17) , 1629-1631
- https://doi.org/10.1063/1.99933
Abstract
We have fabricated high‐sensitivity Hg1−xCdxTe detectors from low‐temperature metalorganic vapor deposition samples. Responsivities of R=2000 V/W and detectivities of D*=2×1010 cm Hz1/2/W have been achieved.Keywords
This publication has 4 references indexed in Scilit:
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- HgTe–CdTe superlattices and Hg1−xCdxTe grown by low-temperature metalorganic chemical vapor depositionJournal of Vacuum Science & Technology A, 1987
- High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Hg1−xCdxTe-Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applicationsJournal of Applied Physics, 1985