A Simple Model for Negative Resistance by Impact Ionization of Deep Level Impurities

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Abstract
A simple model for the negative resistance is proposed taking into account of impact ionization of deep level impurities. The positive feed back by the conductivity modulation due to the number of carriers are taken into account. But the modulations of mobility are neglected. The results of the calculations show that this model can explain qualitatively, the influences of resistivity, density of deep level impurities and their ionization energy, on the characteristics of high resistivity extrinsic semiconductors with injective or ohmic contacts, for example germanium p–i–n junctions.

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