Electron Energy Loss Spectra of In/Si(111) Superstructures
- 1 June 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (6A) , L452
- https://doi.org/10.1143/jjap.25.l452
Abstract
Electron energy loss spectra (EELS) of Si(111) √3×√3–In, Si(111)√31×√31–In, Si(111)4×1–In superstructured surfaces were measured and compared with those of non-superstructured In/Si(111) surfaces. The shape of the loss spectrum of a superstructured surface is found to differ from that of a non-superstructured surface at coverages between 0.3 and 0.7 monolayers. The difference is discussed from the viewpoint of the surface electronic states.Keywords
This publication has 7 references indexed in Scilit:
- Surface states on Si(111)√3¯×√3¯-In: Experiment and theoryPhysical Review B, 1985
- Theory of the intersurfacedband plasmonSolid State Communications, 1984
- Isothermal desorption of indium from √31−In and √3−In on silicon (111) surfacesSurface Science, 1979
- Superstructures of submonolayer indium films on silicon (111)7 surfacesApplied Physics Letters, 1979
- RHEED observation of the
Si (111)(31 31 R ± 9° -In structureSurface Science, 1979 - Plasmon excitations of free and adsorbed thin metallic filmsPhysics Letters A, 1972
- Surface reactions of silicon with aluminum and with indiumSurface Science, 1964