Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity

• 1 January 1993
• book chapter
• Published by Springer Nature
• p. 289-298
• https://doi.org/10.1007/978-1-4899-1588-7_31

Abstract

Keywords

• DEFECT CLUSTER
• POSITRON ANNIHILATION SPECTROSCOPY LIFETIME
• POSITRON ANNIHILATION SPECTROSCOPY
• OXIDE BREAKDOWN
• BREAKDOWN CHARACTERISTIC