X-ray diffraction study of a semiconductor/electrolyte interface: n-GaAs (001)H 2SO 4(:Cu )
- 15 May 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 352-354, 346-351
- https://doi.org/10.1016/0039-6028(95)01158-7
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Cu deposition onto n-GaAs(100): optical and current transient studiesJournal of Electroanalytical Chemistry, 1995
- Atomic resolution images of GaAs(111)A surfaces in sulfuric acid solutionSurface Science, 1995
- In situ observations of atomic resolution image and anodic dissolution process of p-GaAs in HCl solution by electrochemical atomic force microscopeSurface Science, 1994
- In situ observation of anodic dissolution process of n-GaAs in HCl solution by electrochemical atomic force microscopeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- GaAs deposition on the (100) and (110) planes of gold by electrochemical atomic layer epitaxy: A low-energy electron diffraction, Auger electron spectroscopy, and scanning tunneling microscopy studyJournal of Vacuum Science & Technology A, 1992
- Preliminary Studies of GaAs Deposition on Au(100), (110), and (111) Surfaces by Electrochemical Atomic Layer EpitaxyJournal of the Electrochemical Society, 1992
- Application of scanning tunnelling microscopy to semiconductor/electrolyte interfacesFaraday Discussions, 1992
- Surface stoichiometric changes of n-GaAs after anodic treatment: An XPS studySurface Science, 1986
- Scattering of X-rays from crystal surfacesJournal of Physics C: Solid State Physics, 1985
- Über den Mechanismus der anodischen Auflösung von GalliumarsenidBerichte der Bunsengesellschaft für physikalische Chemie, 1965