Ultra-shallow, abrupt, and highly-activated junctions by low-energy ion implantation and laser annealing
- 28 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1171-1174
- https://doi.org/10.1109/iit.1998.813892
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- The Applied Materials xRLEAP ion implanter for ultra shallow junction formationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1997