Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profiling
- 15 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (8) , 767-769
- https://doi.org/10.1063/1.90498
Abstract
We have observed, for the first time, a chemical state of silicon different from that of the pure bulk silicon or silicon in SiO2, using Auger electron spectroscopy. In the E N (E) spectra this state gives a major transition at 83.3 eV compared to 90.3 eV for bulk Si and 74.2 eV for SiO2. We have observed this state both at the Si/SiO2 interface of MOS oxide structures during sputter profiling and for thin native oxides without sputtering. The state is difficult to see in the dE N (E)/dE spectra due to the presence of the sharp edge of the free silicon peak at 92 eV which tends to mask it.Keywords
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