Optically pumped laser action at 77 K of InGaP/InGaAlP double heterostructures grown by MBE

21 January 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (2) , 62-63
https://doi.org/10.1049/el:19820043

Abstract

Optically pumped laser action at a wavelength of 0.63 μm has been achieved at 77 K in InGaP/InGaAlP double heterostructures grown on (100) GaAs substrates by molecular beam epitaxy. The threshold pump power density was about 2.5 × 10³ W/cm²

Keywords

THRESHOLD PUMP POWER DENSITY
III-V SEMICONDUCTORS
IR LASER ACTION
GAAS SUBSTRATES
OPTICALLY PUMPED LASER ACTION
MOLECULAR BEAM EPITAXY
INGAP-INGAALP DOUBLE HETEROSTRUCTURE
0.63 MICRONS WAVELENGTH
77K
SEMICONDUCTOR JUNCTION LASERS
MBE
LOW TEMPERATURE

This publication has 1 reference indexed in Scilit:

HETEROSTRUCTURE MATERIALS
Published by Elsevier ,1978