Dry Etching of GaAs , AlGaAs , and GaSb Using Electron Cyclotron Resonance and Radio Frequency CH 4 / H 2 / Ar or C 2 H 6 / H 2 / Ar Discharges
- 1 May 1991
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 138 (5) , 1432-1439
- https://doi.org/10.1149/1.2085802
Abstract
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