On the doping efficiency of nitrogen in hydrogenated amorphous germanium
- 4 January 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (1) , 58-60
- https://doi.org/10.1063/1.108818
Abstract
This letter reports on the doping efficiency of nitrogen in a-Ge:H films of electronic quality. It has been found that nitrogen is an effective dopant in the a-Ge:H network, its doping efficiency being similar to the one corresponding to phosphorus in a-Si:H. The concentration of active nitrogen atoms decreases with impurity content following a square root dependence on total nitrogen. This behavior is similar to the one determined for column V dopants in a-Si:H films of electronic quality.Keywords
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