Theory of the magnetophonon effect for the two-dimensional electron gas in semiconducting heterostructures

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Abstract
The theory of the transverse magnetophonon effect is developed for inversion layers in semiconducting heterostructures in the presence of a quantising magnetic field perpendicular to the interface. It is assumed that the electrons move in quasi-two-dimensional sub-bands, and that the optic phonons and the polar electron-phonon interaction are not modified by the presence of the interface. Collisional broadening of the Landau levels is taken into account. The theoretical results show a good agreement with the experimental results for the magnetophonon effect in GaAs/AlGaAs heterostructures.