Hole Mobilities and Surface Generation Currents of CVD Insulators on Germanium
- 1 September 1989
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 136 (9) , 2699-2705
- https://doi.org/10.1149/1.2097559
Abstract
Gated diode and MISFET structures have been used to study surface leakage currents and surface mobility of germanium when passivated with the following insulators deposited in an indirect plasma chemical vapor deposition system:, , , , and . A thermally grown interface showed the lowest leakage current and a interface showed the highest hole mobility.Keywords
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